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Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 34 150 175 0.057 UNIT V A W C
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 100 100 30 34 24 136 150 175 175 UNIT V V V A A A W C C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.0 UNIT K/W K/W
February 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 100 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; ID = 15 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.052 MAX. 4.0 10 1.0 100 0.057 UNIT V V A mA nA
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 15 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; Rgen = 50 ; RGS = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 12 TYP. 16 1500 450 130 20 40 150 65 3.5 4.5 7.5 MAX. 2000 600 200 30 60 200 85 UNIT S pF pF pF ns ns ns ns nH nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 34 A ; VGS = 0 V IF = 34 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 1.8 100 1.0 MAX. 34 136 2.5 UNIT A A V ns C
February 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx56-lv
1
D= 0.5
0.1
0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01
0.01
D=
0
20
40
60
80 100 Tmb / C
120
140
160
180
0.001 1E-05 1E-03 t/s
T 1E-01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
ID / A VGS / V = 15 20 10
120 110 100 90 80 70 60 50 40 30 20 10 0
70 60 50 40
BUK456-100A 8 7
6 30 20 5 10
0 20 40 60 80 100 Tmb / C 120 140 160 180
0
4 0 2 4 VDS / V 6 8 10
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
ID / A BUK456-100A,B
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 BUK456-100A VGS / V = 7.5 8 10 0.1 20
1000
0.2
100
RD
S(
) ON
=
VD
ID S/
A tp = 10 us 100 us
10 DC
1 ms 10 ms 100 ms
1
0
1 10 VDS / V 100 1000
0
20
40 ID / A
60
80
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS
February 1996
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
70 60 50 40 30 20
ID / A Tj / C = 25
BUK456-100A
4
VGS(TO) / V max.
150
typ. 3 min. 2
1
10 0
0
0
2
4 VGS / V
6
8
10
-60
-20
20
60 Tj / C
100
140
180
Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A SUB-THRESHOLD CONDUCTION
gfs / S 20
BUK456-100A
1E-01
1E-02
1E-03
2%
typ
98 %
10
1E-04
1E-05
0 0 20 40 ID / A 60
1E-06 0 1 2 VGS / V 3 4
Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V
a Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
10000
C / pF
BUK4y6-100
Ciss 1000 Coss 100 Crss
-60
-20
20
60 Tj / C
100
140
180
10 0 20 VDS / V 40
Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 15 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
February 1996
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
12 10 8 6
VGS / V VDS / V =20
BUK456-100
70 60 50
IF / A
BUK456-100A
80
40 Tj / C = 150 30 25
4 2 0
20 10 0
0 20 QG / nC 40
0
1 VSDS / V
2
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 34 A; parameter VDS
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
February 1996
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max 4.5 max 1.4 max
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.15. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.16. SOT404 : soldering pattern for surface mounting.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8".
February 1996
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1996
7
Rev 1.000

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